In this present work, novel MoSb2-xCuxSe4 thin films were prepared for different copper concentrations (x=0.0, 0.1, 0.2 and 0.3M) by a simple chemical bath deposition method. XRD patterns revealed the phase conversion of orthorhombic Sb2Se3 into Cu3SbSe3 by the incorporation of copper content with successive peak shift towards higher angles. Average crystallite was found to be 8, 17 and 25nm for 0.1, 0.2 and 0.3M Cu content, respectively. Fourier transform infrared spectra witnessed the presence of functional groups in citric acid and metal oxide vibrations. Field emission scanning electron microscope analysis picturized the grain size growth with respect to Cu content. UV-Vis analysis showed higher absorption in the visible region, and band gap values were found to be 2.08-1.69eV. Hall effect studies confirm the p-type nature of the material. The photocurrent analysis shows higher photoconversion efficiency of 1.196% for 0.3M copper content. Copyright (c) 2017 John Wiley & Sons, Ltd.