Considerable interest in highly mismatched semiconductor alloys as materials for device applications has recently been shown. However, the spinodal instability can be a serious obstacle to their use. Here, the spinodal decomposition regions of dilute nitride InxGa1-xSbyAszN1-y-zInxGa1-xSbyAszN1-y-z and In(x)Ga(1-x)Sb(y)As(z)N(1-y-z)quinary alloys lattice matched to III-V compounds are studied from 0 degrees C to 1000 degrees C. The alloys contain six types of chemical bonds corresponding to the constituent compounds, and rearrangement of atoms changes the bonds between them. Therefore, a size and location of the spinodal decomposition regions depend on the enthalpies of constituent compounds, internal strain energy, coherency strain energy and entropy. Among the considered alloys, InxGa1-xSbyAszN1-y-z lattice matched to InAs, InxGa1-xSbyAszN1-y-z lattice matched to GaP and InP and In(x)Ga(1-x)Sb(y)As(z)N(1-y-z)lattice matched to GaAs and InP are most suitable for device applications. (C) 2017 Elsevier B.V. All rights reserved.