The method of growing of ZnS and ZnSe single crystals doped with chromium and iron using a combination of the solid phase recrystallization and diffusion doping during the high-temperature gas-static pressing has been implemented. The isostatic pressing up to 110 MPa has made it possible to increase the process temperature up to 1300 degrees C, increase the rate of grain growth and diffusion of Fe2+ and Cr2+ ions in zinc chalcogenides crystalline samples, reduce processing time to 25-150 h. ZnS:Cr(Fe) and ZnSe:Cr (Fe) single crystals from several to tens mm in size with dopant concentrations of (1-5) x 10(19) cm(-3) for Cr2+ and (5-20) x 10(18) cm-3 for Fe2+ and at the total impurity's content no more than 5x10(-4) wt% have been obtained. The lasers made from the crystals demonstrated 55% differential lasing efficiency for the absorbed power.