For solution growth of 4H-SiC, the surface morphology of the crystals grown on {0001} and {1 (1) over bar 0m} (m=0. 4, 10 and 20) surfaces was systematically investigated. For short-term growth for 30 min on {0001} and {1 (1) over bar 0m} (m=0 and 2) seeds, the height of the macrosteps was less than 400 nm, and terraces having the same crystallographic orientation as the seeds were formed. In contrast, the growth surfaces on {1 (1) over bar 0m} (m=4, 10 and 20) seeds became rough owing to the surface reconstruction with the {1 (1) over bar 02} and {0001} planes, suggesting the morphological stability of the {1 (1) over bar 0m} (m=0 and 2) planes. Long-term morphological stability was examined by bulk growth experiments for 24 h. A smooth growth surface was obtained on both (110 (1) over bar) and (110 (2) over bar) seeds. Surface roughening owing to the macrostep faceting was observed for the long-term growth on (000 (1) over bar) and (110 (0) over bar) seeds, whereas smooth step-terrace surfaces were obtained for the short-term growth on these planes. We also found that surface roughening tended to increase in the step-flow directions in which the angle formed by the original growth surface and a faceted slope of large macrosteps is large. Among the ((1) over bar 10 (m) over bar) (m=1 and 2) planes, growth on a ((1) over bar 10 (1) over bar) plane exhibited the smoothest surface even after long-term growth with several millimeters in thickness.