Fully three dimensional (3D) numerical simulation model of the heat and mass transfer in the silicon (Si) Czochralski growth with a transverse magnetic field (MCZ) was developed. Time transient calculation of heat and mass transfer in the industrial scale crystal growth of 300 mm diameter was performed under the quasi steady state assumption. The model predicts the completely asymmetrically 3D melt flow and off-centered temperature distributions, different from the previous works. The temperature distribution measured experimentally by thermocouples, beneath the melt surface along the azimuthal direction, was almost the same as the model prediction, providing a strong support for the 3D simulation model.