In this work, we developed an electroplating technique to produce uniform, low-internal-stress and controlled-expansion nickel iron alloy (36% of Nickel and 64% of Iron (INVAR)) films deposited on different substrates to fabricate redistribution layers (RDL), through silicon vias (TSV) interconnects, pillars, bumps, pads and free standing foils. The linear thermal expansion of the INVAR deposits was measured down to 0.4 +/- 0.1 (x10(-6), K-1) within a process window that corresponds to ultra-low internal stress (30 +/- 2 MPa) and low surface roughness (Ra similar to 2 nm). Thermal conductivity and specific heat capacity of the INVAR pinhole-free films were found to be in the range of 43 +/- 5 W/mK and 0.45 +/- 0.05 J/gK, respectively. Ultra-high ductility of about 40 +/- 10 % has been obtained for free standing INVAR films, which possess high tensile strength of 500 +/- 60 MPa and yield strength of 280 +/- 50 MPa. (C) 2017 The Electrochemical Society. All rights reserved.