For texturing of multicrystalline silicon wafers for solar cells, a HF-free texturing process was proposed by employing alkali cleaning (anisotropic etching) process after laser texturing. KOH/isopropyl alcohol (IPA) was more effective than KOH because the cleaning rate was rather slow but the shape of textured surface could be kept during the cleaning. After laser texturing with 5min KOH/IPA cleaning at 80 degrees C, the solar cell efficiency was increased from 4.6% to 12.6% because of the removing droplets of laser induced defects and the formation of microscopic textures by anisotropic etching.