1D Nanowire CH3NH3PbI3 thin films have been successfully constructed by solvent etching technique. The etching solution was consisted of a small amount of polar solvent in non-polar solvent, and the roughness of the film can be precisely controlled by the adding amount of polar solvent. A best and repeatable PCE of 17.62% was achieved from the CH3NH3PbI3-based solar cells device with nanowire film morphology and p-i-n structure. Solvent etching process was an advanced technique for perovskite nanowire construction because of its simple, universal and effective operation.