Cubic perovskite BaSnO3 (BSO) nanostructure has rationally been addressed as a promising charge carrier transporting material in dye sensitized solar cells (DSCs) next to TiO2. In the present work, the Fe impurity ions have initially been introduced into BSO crystallographic system with the help of solution chemistry for systematically altering the position of atoms in their lattice point towards developing insight properties. The changing of physical properties (structural, morphological, optical and magnetic) of BSO semiconductor by Fe doping is significantly confirmed by using fundamental characteristic tools. After authentically identifying the desirable physico-chemical properties of BSO by a gradient Fe dopant, we sensitively engineer the pristine, 0.01%, 0.03% and 0.05% Fe doped BSO/TiCl4 treatment/TiO2 scattering layer novel photoelectrodes for fabricating DSCs. As scientifically expected that the power conversion efficiency (PCE) of Fe doped BSO/TiCl4 treatment/TiO2 scattering layer photoanodes is increased as compared to that of pristine BSO/TiCl4 treatment/TiO2 scattering layer photoanode. We have achieved one of the highest PCE in 0.03% Fe doped BSO/TiCl4 treatment/TiO2 scattering layer photoelectrode based DSCs, the obtained maximum value is 7.78%. The stability of the novel BSO photoelectrodes is then measured by using transient photocurrent and photovoltage measurements.