The use of lattice kinetic Monte Carlo techniques for reproducing epitaxial growth of silicon using H-2/SiH4 chemistry is described in this work. The implementation of the surface mechanisms is limited to silane and hydrogen adsorption, surface dissociation of higher order hydrides and recombinative hydrogen desorption. Good agreement between simulation and experimental results available in the literature was obtained for H-2 desorption peak positions, equilibrium hydrogen coverages and Si growth rates. The formation of (111) and (113) planes is also reproduced, however no evidence of (131) was found even at 850 degrees C, and (119) planes were not formed at the same position than actual grown structures. (C) 2017 Elsevier B.V. All rights reserved.