A low-temperature poly-Si film with 99.8% {100} texture in the surface normal direction within 10(circle) is obtained by single-scan continuous-wave laser lateral crystallization of 60 nm-thick a-Siwithout a seed at room temperature in air. This texture extends over the entire melted width of 105 mu m except for narrow edge regions and is maintained for the full scan length of 1.8mm. Highly {100}-oriented films in the surface-normal direction are obtained at the low net laser power P(1-R) of 1-1.25 W above the threshold for the lateral grain growth, where P is the incident total power, and R is the reflectivity of the sample. A second power threshold exists where the degree of the {100} surface-normal texture begins to decrease above the first threshold for lateral grains. Above the second threshold, the percentage of the {100} surface-normal texture decreases linearly with the increasing P(1-R) at the same slope of 20% in 0.1 W change for all the samples with different cap thicknesses. (C) 2017 Elsevier B.V. All rights reserved.