The adsorption of alkali-metal atoms on GaN nanowires photocathode was investigated by using first principles with density functional theory. The calculation of electronic and optical properties indicates that alkali metal adsorbed GaN nanowires are direct band gap semiconductor, and the band gap of GaN nanowires could be decreased by alkali metal adsorption. A new surface state near the Fermi level results from the Ga, N and alkali metal hybridization, which leads to form a metal electrical conductivity for GaN nanowires. More importantly, alkali metal adsorption can decrease the work function of GaN nanowires. Furthermore, the absorption spectrum of GaN nanowires is red shifted and moves to lower energy side because of alkali metal adsorption. Accordingly, this study will provide the theoretical basis for producing the alkali metal adsorbed GaN photoelectric devices. (C) 2017 Elsevier B.V. All rights reserved.