Applied Surface Science, Vol.422, 39-45, 2017
Fabrication and photoelectric properties of Cu2FeSnS4(CFTS) and Cu2FeSn(S,Se)(4)(CFTSSe) thin films
This report details the development of a simple, non-vacuum, mild route for the fabrication of CFTS and CFTSSe thin films. This work investigates the synthesis of CFTS powder using solid-phase synthesis. Subsequently, the stable colloidal ink was prepared and blade-coated onto Mo-coated substrates followed by an annealing process under an Ar atmosphere. Thin films of this material were converted into CFTS and CFTSSe thin films by sintering and exposing them in sulfur or selenium vapor. The structures of the CFTS and CFTSSe were observed to be consistent with the stannite phase. The crystal lattice parameters of the CFTS and CFTSSe post-annealed films were determined by their respective X-ray diffraction patterns and Raman scattering measurements. The band gaps of CFTS and CFTSSe films, as determined by UV-vis absorption, were estimated to be 1.32 eV and 1.22 eV with an error of +/- 0.02 eV. The corresponding CFTS and CFTSSe films showed a clear photoresponse without current transients, which is promising for future photovoltaic applications. (C) 2017 Elsevier B.V. All rights reserved.