Bilayer CeO2/TiO2 films with high-k dielectric property were prepared by rf magnetron sputtering technique at room temperature. Effect of annealing treatment on resistive switching (RS) properties of bilayer CeO2/TiO2 films in O-2 ambient at different temperature in the range of 350-550 degrees C was investigated. Our results revealed that the bilayer films had good interfacial property at 500 degrees C and this annealing temperature is optimum for different RS characteristics. Results showed that bilayer CeO2/TiO2 film perform better uniformity and reliability in resistive switching at intermediate temperature (i.e. 450 degrees C and 500 degrees C) instead of low and high annealing temperature (i.e. 350 degrees C and 550 degrees C) at which it exhibits poor crystalline structure with more amorphous background. Less Gibbs free energy of TiO2 as compared to CeO2 results in an easier re-oxidation of the filament through the oxygen exchange with TaN electrode. However, the excellent endurance property (>2500 cycles), data retentions (10(5) s) and good cycle-to-cycle uniformity is observed only in 500 degrees C annealed devices. The plots of cumulative probability, essential memory parameter, show a good distribution of Set/Reset voltage. (C) 2017 Elsevier B.V. All rights reserved.