First time the method of plasma-enhanced chemical vapor deposition was used for preparation of As-Te chalcogenide films of different chemical and phase composition. The samples were synthesized via direct interaction of arsenic and tellurium vapors into low-temperature non-equilibrium RF (40 MHz) plasma discharge at reduced pressure (0.1 Torr). The plasma parameters such as temperature and concentration of electrons were measured by moving double probe diagnostic system. The dependence of solid phase radial distribution on plasma characteristics was established. Besides, the phase and structural evolution of As-Te films based on equilibrium coexistence of two phases (AsTe and As2Te3) and implemented by changing of the ratio of the initial substances in gas phase has been studied and discussed.