rGO supported CdS photocatalysts has been prepared by a two steps method, i.e. impregnation of GO/rGO with CdSO4 followed by a high temperature reaction with H2S gas. Activity of this catalyst was superior to a catalyst of same composition prepared by commonly reported hydrothermal technique. Detailed microstructure studies were carried out using FTIR, PL, DRS, XRD, TEM, SAED, TPO and XPS. A much greater chemical interaction at the interface of CdS and rGO and also a higher absorption of visible light were observed in the reported catalyst. It has been concluded that the high temperature reaction with H2S has imparted n-type semiconductivity to CdS which with p-type rGO and synergy of chemical interaction at the interface has resulted into formation of a p-n hetrojunction. The formation of hetrojunction and high electron mobility of rGO has given a superior activity due to an efficient charge separation to the catalyst prepared by the technique reported in this paper. (C) 2017 Published by Elsevier B.V.