Elimination of double position domains (DPDs) in epitaxial < 111 >-3C-SiC on Si(111) by laser CVD

Xu QF; Zhu PP; Sun QY; Tu R; Yang MJ; Zhang S; Zhang LM; Goto T; Yan JS; Li SS

Applied Surface Science, Vol.426, 662-666, 2017

DOI10.1016/j.apsusc.2017.07.239 Export Citation

Elimination of double position domains (DPDs) in epitaxial < 111 >-3C-SiC on Si(111) by laser CVD

Xu QF, Zhu PP, Sun QY, Tu R, Yang MJ, Zhang S, Zhang LM, Goto T, Yan JS, Li SS

Elimination of double position domains (DPDs) in epitaxial < 111 >-3C-SiC film on Si(111) substrate was conducted by laser chemical vapor deposition (LCVD) without carbonization. Transmission electron microscopy and pole figure were employed to investigate the microstructure and volume fraction of DPDs in the epitaxial layers, respectively. DPDs significantly decreased with decreasing deposition temperature (T-dep ) and vanished at T-dep = 1273 K. The mechanism of the elimination of DPDs by LCVD also has been discussed. (C) 2017 Elsevier B.V. All rights reserved.

Keywords:3C-SiC;Epitaxial growth;Elimination of double position domains (DPDs);Laser CVD