Chemistry Letters, Vol.46, No.12, 1832-1835, 2017
Significantly Improved Performance of a Conducting-bridge Random Access Memory (CB-RAM) Device Using Copper-containing Glyme Salt
Significant improvement in cycling endurance and operating voltage dispersion has been accomplished by the addition of Cu-doped triglyme (G3) to the HfO2 film of the Cu/HfO2/Pt-type conducting-bridge random access memory (CB-RAM); both the V-set distribution and the charge-transfer resistance ( R-ct) values were significantly reduced.