Particularities of Molecular Beam Epitaxial (MBE) technology for the growth of Topological Insulators (TI) based on the semi-metal Hg1-xCdxTe are presented. A series of strained layers grown on GaAs substrates with a composition close to the 3D Dirac point were studied. The composition of the layers was verified by means of the position of the E-1 maximum in optical reflectivity in the visible region. The surface morphology was determined via atomic force and electron microscopy. Magneto-transport measurements show quantized Hall resistance curves and Shubnikov de Hass oscillations (up to 50 K). It has been demonstrated that a well-developed MBE technology enables one to grow strained Hg1-xCdxTe layers on GaAs/CdTe substrates with a well-defined composition near the 3D Dirac point and consequently allows one to produce a 3D topological Dirac semimetal - 3D analogy of graphene - for future applications. (C) 2017 Elsevier B.V. All rights reserved.