Two-dimensional transition metal dichalcogenides (TMDs) show a potential application in photoelectric device due to their excellent electrical and optical properties. Here, we report that the MoO3 pre-deposited chemical vapor deposition (CVD) is used to synthesize single crystal monolayer MoS2 triangles on 4 in. wafer. We found that the wafer-scale uniformity of MoS2 can be greatly improved by regularly depositing MoO3 particles on substrate before CVD growth. Therefore, a piece of cleanroom wiper was used as a template for implementing precise control of MoO3 pre-deposition. We found that the optimal deposition size of MoO3 particles and the distance between MoO3 particles are about 15 mu m and 0.9 mm, respectively. Both microscopic and spectroscopic characterization results demonstrate that the as-grown MoS2 is highly uniform in space distribution and crystal structure. The electronic performance of MoS2 synthesized by our method is comparable to or even slightly better than those in common CVD samples. The role of MoO3 pre-deposition is not only to effectively control the MoS2 nucleation density but also to overcome poor diffusion of MoO3 source. Our method is expected to accelerate the industrial synthesis of the atomically thin TMD materials. (C) 2017 Elsevier B.V. All rights reserved.