In this work, the self-assembled GaAs based nano-hole formation prepared by droplet epitaxial technique is discussed. Here, a qualitative explanation is given why thermal solution cannot be observed under droplet edge and can only detected under droplet middle. The thermal etching takes place far from the droplet edge because of its special quantum mechanical state, which causes melting point increase at the droplet edge. Furthermore it is explained, why thermal solution is preferred under the middle of the droplet. Here, we give a lucid interpretation for the nano-hole formation dependence on the arsenic environment. It is evidenced, that the surrounded lobe initiative originates from the remained droplet edge. We give here a qualitative description why we need somewhat ambient arsenic for the process of nano-hole formation. The material transport needs arsenic ambient and not the thermal solution. (C) 2017 Elsevier B.V. All rights reserved.