We compare the interface roughness scattering of electrons at the In0.53Ga0.47As/In0.52Al0.48As heterointerface simultaneously grown on (100) and (411) A oriented InP substrates using gas-source molecularbeam epitaxy (MBE). A modulation-doped double quantum well structure is designed to emphasize the effects of interface scattering. The transport properties for both (100) and (411) A orientations are compared for different MBE growth temperatures. The highest mobilities on (411) oriented structures are 40% higher than those on (100) oriented structures, indicating less electron scattering due to interface roughness scattering. (C) 2016 Elsevier B.V. All rights reserved.