In this work, we demonstrate a self-assisted VLS growth of GaAs nanowires directly on GaAs (111)B substrates without assistance of SiO2 layer. We believe that with this technique, we can overcome some inherent problems that usually occur in conventional self-assisted VLS growth and simplify the process. Moreover, to study the effect of substrate temperature, each nanowire sample was fabricated at the different temperature from 400 degrees C to 600 degrees C using Molecular Beam Epitaxy (MBE) technique. Surface morphology, elemental composition, and crystal structure of nanowire samples were characterized by Scanning Electron Microscope (SEM), Energy-dispersive X-ray spectroscopy (EDX), and X-ray Diffraction Analysis (XRD) respectively. (C) 2017 Elsevier B.V. All rights reserved.