The effect of low-temperature post-deposition annealing (PDA) on electrochemically deposited cuprous oxide (ECD-Cu2O) thin-films was investigated. The PDA at 150 degrees C drastically improved optoelectronic properties of ECD-Cu2O films regardless of annealing atmosphere. The films exhibits free exciton luminescence at room temperature and a high holemobility about 18 cm(2)/V.s. Moreover, the diffusion length of photo-generated carriers increased around two times compared to the as-deposited film. On the other hands, the PDA at 200 degrees C significantly deteriorated the optoelectronic properties presumably due to the increase of mid-gap defects in the Cu2O films. (C) 2017 The Electrochemical Society. All rights reserved.