A large-grain and highly crystalline Cu3BiS3 thin film is successfully prepared by a dimethyl sulfoxide (DMSO)-based solution coating process. Without involving post sulfurization, Cu3BiS3 absorber with grain size of similar to 1 inn has been achieved via a short-time drying of spin-coated precursor film on a hot plate at relatively low temperatures (< 300 degrees C). Our Cu3BiS3 film exhibits a direct band gap of 1.47 eV with high absorption coefficients (similar to 7 x 10(4) cm(-1)). Hall effect measurements reveal a p-type conductivity with hole concentration of similar to 10(16) cm(-3) and mobility of 52.83 cm(2)/(V s). Moreover, an initial Cu3BiS3 thin film solar cell with the device structure of glass/Mo/Cu3BiS3/CdS/ZnO/ITO/Al is fabricated, achieving a definite conversion efficiency of 0.17%. The mild preparation condition promises great potential of current method in realizing Cu3BiS3 solar cells on temperature-sensitive substrates such as flexible polymer through an energy efficient way. The Cu3BiS3 has thus been presented as a promising absorber material for solar cell applications.