Pb-0.92(La-1_y Eu-y)(0.08)(Zr0.52Ti0.48)(0.98)O-3 (PLEZT) films were prepared with varying Eu + concentrations (y = 0.0, 0.3, 0.5 and 0.7) to study the doping effect on crystal structure and ferroelectric properties. The XRD results confirmed the formation of tetragonal perovskite structure in PLEZT with gradual increase in (110) peak intensity. The residual stress value calculated for PLZT fllm was (+)0.751 GPa which reduces to (+)0.387 GPa with increasing Eu3+ concentration. The influence of Eu3+ doping concentration on ferroelectric switching behaviour was investigated by observing the remanent polarization, spontaneous polarization and displacement current. The remanent polarization (P r) in PLZT fllm increased from 8.9 mu C/cm(2) to 13.3 mu C/cm(2) with Eu3+ concentration which is expected due to the increase in tetragonality factor and reduction in dipolar defects in PLEZT films. A strong residual stress dependent ferroelectric properties and phase transition temperature was observed in PLZT films with Eu3+ doping. The improved fatigue resistance observed in Eu3+ doped PLZT may be due to the suppression of oxygen ion vacancy.