Effect of thickness of Bi1.5Zn1.0Nb1.5O7 gate insulator on performance of ZnO based thin film transistors (Retraction Article) (Retraction of Vol 390, Pg 831, 2016)

Ye W; Deng JP; Wang XF; Cui LK

Applied Surface Science, Vol.443, 656-656, 2018

DOI10.1016/j.apsusc.2018.03.064 Export Citation

Effect of thickness of Bi1.5Zn1.0Nb1.5O7 gate insulator on performance of ZnO based thin film transistors (Retraction Article) (Retraction of Vol 390, Pg 831, 2016)

Ye W, Deng JP, Wang XF, Cui LK