In this work, high-performance inverted planar perovskite solar cells (PSCs) using sol-gel processed Y-doped NiO thin films as hole transport layer (HTL) were demonstrated. Y-doped NiO thin films containing different Y doping concentrations were successfully prepared through a simple sol-gel process. The Y doping could significantly improve the electrical conductivity of NiO thin film, and the photovoltaic performance of Y-doped NiO HTL-based PSC devices outperformed that of the pristine NiO HTL-based device. Notably, the PSC using a 5%Y-NiO HTL exhibited the champion performance with an open-circuit voltage (V-oc) of 1.00 V, a short circuit current density (J(sc)) of 23.82 mA cm (2), a fill factor (FF) of 68% and a power conversion efficiency (PCE) of 16.31%, resulting in a 27.62% enhancement in PCE in comparison with the NiO device. The enhanced performance of the Y-doped NiO device could be attributed to the improved hole mobility, the high quality compact active layer morphology, the more efficient charge extraction from perovskite absorber as well as the lower recombination probability of charge carriers. Thus, this work provides a simple and effective approach to improve the electrical conductivity of p-type NiO thin films for use as a promising HTL in high performance PSCs. (C) 2018 Elsevier B.V. All rights reserved.