We report on the tunable and controlled dielectric properties of iron (Fe)-doped gallium oxide (Ga2O3; Ga1.9Fe0.1O3, referred to as GFO) inorganic compounds. The GFO materials were synthesized using a standard high-temperature, solid-state chemical reaction method by varying the thermochemical processing conditions, namely, different calcination and sintering, environments. Structural characterization X-ray diffraction revealed that GFO compounds crystallize in the,beta-Ga2O3 phase. The Fe doping has induced slight lattice strain in GFO, which is evident in structural analysis. The effect of the sintering temperature (T-sint), which was varied in the range of 900-1200 degrees C, is significant, as revealed by electron microscopy analysis. T-sint influences the grain size and microstructure evolution, which, in turn, influences the dielectric and electrical properties of GFO compounds. The energy-dispersive X-ray spectrometry and mapping data demonstrate the uniform distribution of the elemental composition over the microstructure. The temperature- and frequency-dependent dielectric measurements indicate the characteristic features that are specifically The spreading factor and relaxation, time, calculated using Cole-Cole plots, are in the ranges 0.65-0.76 and 10(-4) s, respectively. The results demonstrate that densification and control over the microstructure and properties of GFO can be achieved by optimizing T-sint.