Roll-over phenomenon in the current-voltage (J-V) curve is often observed in a CdTe thin film solar cell. The roll-over phenomenon, which is occurred near the open-circuit voltage in a light J-V curve, is due to Schottky energy barrier formed at the CdTe/metal interface in a CdTe solar cell back contact. In this study we report a J-V roll-over phenomenon which is induced by an energy bather at the front contact of a CdTe solar cell. Two kinds of oxides, namely, Al2O3 and SnO2, were deposited as high-resistance transparent (HRT) layer between the window layer CdS and the fluorine doped tin oxide (PTO) front electrode in CdTe solar cells. These two oxides present much different electronic band alignment with FTO and CdS. SnO2 formed almost no energy barrier with CdS, this allowed smooth transport for photo-generated electrons from CdTe to CdS and FTO. However, Al2O3 formed a high energy barrier with CdS. The rather high energy barrier with a value of 3.43 eV at the CdS/Al2O3 interface induced a J-V roll-over phenomenon in a CdTe thin film solar cell, which dramatically led to a quick decrease for the cell device efficiency. The electron transport at the FTO/Al2O3/CdS interface is governed by tunneling effect. The results presented in this study demonstrate that the band structure at the front electrode plays an important role for the performance of a CdTe thin film solar cell.