We report on nm-resolution imaging of charge-carrier distribution around local potential-induced degradation (PM) shunting defects using scanning capacitance microscopy. We imaged on cross sections of heavily field degraded module areas, cored out and selected by mm-scale photoluminescence imaging. We found localized areas with abnormal carrier behavior induced by the PID defects: the apparent n-type carrier extends vertically into the absorber to similar to 1-2 mu m from the cell surface, and laterally in similar lengths; in defect-free areas, the n-type carrier extends similar to 0.5 mu m, which is consistent with the junction depth. For comparison, we also investigated areas of the same module exhibiting the least PID stress, and we found no such heavily damaged junction area. Instead, we found slightly abnormal carrier behavior, where the carrier-type inversion in the absorber did not occur, but the p-type carrier concentration changed slightly in a much smaller lateral length of similar to 300 nm. These nano-electrical findings may indicate a possible mechanism that the existing extended defects, which may not be significantly harmful to cell performance, can be changed by PID to heavily damaged junction areas.