We have deposited silicon-incorporated diamond-like carbon (Si-DLC) films by plasma-enhanced chemical vapor deposition using monomethylsilane (CH3SiH3; MMS) as a Si source, and systematically investigated the impacts of substrate bias and dilution gas on the mechanical and tribological properties of the Si-DLC films. The use of a pulse bias and hydrogen dilution is very effective in suppressing the generation of particles during the deposition. The internal stress of the Si-DLC films deposited using the pulse bias tended to be lower than that of the Si-DLC films deposited using a DC bias, while the hydrogen dilution resulted in the increase in the internal stress. On the other hand, the Si-DLC film deposited with H-2 using the pulse bias showed the highest adhesion strength and the lowest friction coefficient. The use of the pulse bias resulted in the increase in the wear resistance.