Graphene-like semiconductor materials have attracted recently significant attention due to their unique properties which can be quite valuable for new generation of nano-and optielectronic devices. The use of various alloys of these materials is particularly promising for the application in highly efficient photovoltaic devices. In this paper, a simple method for the creation of monolayer flakes of transition metal dichalcogenide four-component alloys with substantially different properties is presented. It was shown that the band width of the flakes obtained by this method can vary over a wide range from 1.56 eV to 1.87 eV.