For neutral poly(3-alkylthiophene)s (P3ATs), the electric modulus formalism of dielectric relaxation measurement together with the use of nonexponential decay function can be applied to describe the behavior of conductivity relaxation and carrier transport. The charge mobilities of neutral P3ATs calculated from conductivity relaxation with the use of the defect-diffusion model are in agreement with the data from field-effect transistor measurement. The temperature dependence of charge mobility exhibits a local maximum right after the end of glass transition region, which can be attributed to the transition of soft conforms in the disordered phase to localized conformons. The charge mobilities and activation energies of mobilities for P3ATs are dependent on conjugation length and volume fraction of conducting units.