Leakage Current Reduction of Ni-MILC Poly-Si TFT Using Chemical Cleaning Method

Kwang-Jin Lee; Doyeon Kim; Duck-Kyun Choi; Woo-Byoung Kim

Korean Journal of Materials Research, Vol.28, No.8, 440-444, August, 2018

DOI10.3740/MRSK.2018.28.8.440 Export Citation

Leakage Current Reduction of Ni-MILC Poly-Si TFT Using Chemical Cleaning Method

Kwang-Jin Lee, Doyeon Kim¹, Duck-Kyun Choi^†, and Woo-Byoung Kim^{1, †}

Department of Materials Science & Engineering, Hanyang University, Seoul 04763, Republic of Korea
¹Department of Energy Engineering, Dankook University, Cheonan 31116, Republic of Korea

E-mail:,

An effective cleaning method for Ni removal in Ni-induced lateral crystallization(Ni-MILC) poly-Si TFTs and their electrical properties are investigated. The HCN cleaning method is effective for removal of Ni on the crystallized Si surface, while the nitric acid treatment results decrease by almost two orders of magnitude in the Ni concentration due to effective removal of diffused Ni mainly in the poly-Si grain boundary regions. Using the HCN cleaning method after the nitric acid treatment, re-adsorbed Ni on the Si surfaces is effectively removed by the formation of Ni-cyanide complexions. After the cleaning process, important electrical properties are improved, e.g., the leakage current density from 9.43 × 10-12 to 3.43 × 10-12 A and the subthreshold swing values from 1.37 to 0.67 mV/dec.

Keywords:nickel removal;poly-Si TFTs;nitric acid treatment;hydrogen cyanide cleaning

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[8] Nast O, Hartmann AJ, J. Appl. Phys., 88, 716 (2000)

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[10] Murley D, Young N, Trainor M, McCulloch D, IEEE Trans. Electron Devices, 48, 1145 (2001)

[11] Kobayashi H, Liu YL, Yamashita Y, Ivanco J, Imai S, Takahashi M, Sol. Energy, 80(6), 645 (2006)

[12] Fujiwara N, Liu YL, Takahashi M, Kobayashi H, J. Electrochem. Soc., 153(5), G394 (2006)

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[14] Madani M, Liu YL, Takahashi M, Iwasa H, Kobayashi H, J. Electrochem. Soc., 155(11), H895 (2008)

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[19] Jin Z, Moulding K, Kwok HS, Wong M, IEEE Trans. Electron Devices, 46, 78 (1999)

[20] Kim WB, Matsumoto T, Kobayashi H, Appl. Phys. Lett., 93, 072101 (2008)

[21] Ryuta J, Yoshimi T, Kondo H, Okuda H, Shimanuki Y, Jpn. J. Appl. Phys., 31, 2338 (1992)

[22] Edelman F, Cytermann C, Brener R, Eizenberg M, Khait YL, Weil R, Beyer W, J. Appl. Phys., 75, 7875 (1994)