InAs 양자점 형성 방법이 양자점 적외선 소자 특성에 미치는 효과

서동범; 황제환; 오보람; 노삼규; 김준오; 이상준; 김의태; Dong-Bum Seo; Je-hwan Hwang; Boram Oh; Sam Kyu Noh; Jun Oh Kim; Sang Jun Lee; Eui-Tae Kim

Korean Journal of Materials Research, Vol.28, No.11, 659-662, November, 2018

DOI10.3740/MRSK.2018.28.11.659 Export Citation

InAs 양자점 형성 방법이 양자점 적외선 소자 특성에 미치는 효과

Effect of Growth Methods of InAs Quntum Dots on Infrared Photodetector Properties

서동범, 황제환¹, 오보람¹, 노삼규¹, 김준오¹, 이상준¹, 김의태^†

충남대학교 공과대학 신소재공학과
¹한국표준과학연구원 융합물성측정센터

Dong-Bum Seo, Je-hwan Hwang¹, Boram Oh¹, Sam Kyu Noh¹, Jun Oh Kim¹, Sang Jun Lee¹, and Eui-Tae Kim^†

Department of Materials Science & Engineering, Chungnam National University, Daejeon 34134, Republic of Korea
¹Division of Convergence Technology, Korea Research Institute of Standard Science, Daejeon 34113, Republic of Korea

E-mail:

We report the properties of infrared photodetectors based on two kinds of quantum dots(QDs): i) 2.0 ML InAs QDs by the Stranski-Krastanov growth mode(SK QDs) and ii) sub-monolayer QDs by 4 × [0.3 ML/1 nm In0.15Ga0.85As] deposition(SML QDs). The QD infrared photodetector(QDIP) structure of n+-n-(QDs)-n+ is epitaxially grown on GaAs (100) wafers using molecular-beam epitaxy. Both the bottom and top contact GaAs layers are Si doped at 2 × 1018/cm3. The QD layers are grown with Si doping of 2 × 1017/cm3 and capped by an In0.15Ga0.85As layer at 495 °C. The photoluminescence peak(1.24 eV) of the SML QDIP is blue-shifted with respect to that (1.04 eV) of SK QDIPs, suggesting that the electron ground state of SML QDIP is higher than that of the SK QDIP. As a result, the photoresponse regime(~9-14 μm) of the SML QDIP is longer than that (~6-12 μm) of the SK QDIP. The dark current of the SML QDIP is two orders of magnitude smaller value than that of the SK QDIP because of the inserted Al0.08Ga0.92As layer.

Keywords:InAs;quantum dots;infrared detectors;molecular beam epitaxy

[References]

Yuan H, Apgar G, Kim J, Laquindanum J, Nalavade V, Beer P, Kimchi J, Wong T, Proc. SPIE, 6940, 69403C (2008)
Norton P, Campbell J III, Horn S, Reago D, Proc. SPIE, 4130, 226 (2000)
Horn S, Norton P, Cincotta T, Stoltz AJ, Benson JD, Perconti P, Campbell J III, Proc. SPIE, 5074, 44 (2003)
Radford WA, Patten EA, King DF, Pierce GK, Vodicka J, Goetz P, Venzor G, Smith EP, Graham R, Johnson SM, Roth J, Nosho B, Jensen J, Proc. SPIE, 5783, 325 (2005)
Rogalski A, Prog. Quantum Electron.,., 27, 59 (2003)
Levine BF, J. Appl. Phys., 74, R1 (1993)
Madhukar A, Campbell J, Kim ET, Chen ZH, Ye J, in Semiconductor Nanostructures for Optoelectronics, Artech House, Inc., (2004).
Kim ET, Chen ZH, Madhukar A, Appl. Phys. Lett., 79, 3341 (2001)
Ye Z, Campbell J, Chen ZH, Kim ET, Madhukar A, IEEE J. Quantum Electron., 38, 1234 (2002)
Kim ET, Chen ZH, Ho M, Madhukar A, J. Vac. Sci. Technol. B, 20(3), 1188 (2002)
Lee SJ, Kim JO, Kim YG, Noh SK, Kyu YH, Choi SM, Choe JW, J. Korean Phys. Soc., 46, 1396 (2005)
Kim JO, Lee SJ, Noh SK, Ryu YH, Choi SM, Choe JW, J. Korean Phys. Soc., 47, 838 (2005)
Ting DZY, Bandara SV, Gunapala SD, Mumolo JM, Keo SA, Hill CJ, Liu JK, Blazejewski ER, Rafol SB, Chang YC, Appl. Phys. Lett., 94, 111107 (2009)
Kim JO, Sengupta S, Barve AV, Sharma YD, Adhikary S, Lee SJ, Noh SK, Allen MS, Allen JW, Chakrabarti S, Krishna S, Appl. Phys. Lett., 102, 011131 (2013)

[Referenced By]

[1] Yuan H, Apgar G, Kim J, Laquindanum J, Nalavade V, Beer P, Kimchi J, Wong T, Proc. SPIE, 6940, 69403C (2008)

[2] Norton P, Campbell J III, Horn S, Reago D, Proc. SPIE, 4130, 226 (2000)

[3] Horn S, Norton P, Cincotta T, Stoltz AJ, Benson JD, Perconti P, Campbell J III, Proc. SPIE, 5074, 44 (2003)

[4] Radford WA, Patten EA, King DF, Pierce GK, Vodicka J, Goetz P, Venzor G, Smith EP, Graham R, Johnson SM, Roth J, Nosho B, Jensen J, Proc. SPIE, 5783, 325 (2005)

[5] Rogalski A, Prog. Quantum Electron.,., 27, 59 (2003)

[6] Levine BF, J. Appl. Phys., 74, R1 (1993)

[7] Madhukar A, Campbell J, Kim ET, Chen ZH, Ye J, in Semiconductor Nanostructures for Optoelectronics, Artech House, Inc., (2004).

[8] Kim ET, Chen ZH, Madhukar A, Appl. Phys. Lett., 79, 3341 (2001)

[9] Ye Z, Campbell J, Chen ZH, Kim ET, Madhukar A, IEEE J. Quantum Electron., 38, 1234 (2002)

[10] Kim ET, Chen ZH, Ho M, Madhukar A, J. Vac. Sci. Technol. B, 20(3), 1188 (2002)

[11] Lee SJ, Kim JO, Kim YG, Noh SK, Kyu YH, Choi SM, Choe JW, J. Korean Phys. Soc., 46, 1396 (2005)

[12] Kim JO, Lee SJ, Noh SK, Ryu YH, Choi SM, Choe JW, J. Korean Phys. Soc., 47, 838 (2005)

[13] Ting DZY, Bandara SV, Gunapala SD, Mumolo JM, Keo SA, Hill CJ, Liu JK, Blazejewski ER, Rafol SB, Chang YC, Appl. Phys. Lett., 94, 111107 (2009)

[14] Kim JO, Sengupta S, Barve AV, Sharma YD, Adhikary S, Lee SJ, Noh SK, Allen MS, Allen JW, Chakrabarti S, Krishna S, Appl. Phys. Lett., 102, 011131 (2013)