Growth temperatures and the excess chlorine effect of N-Polar GaN growth via tri-halide vapor phase epitaxy

Takekawa N; Hayashida N; Ohzeki D; Yamaguchi A; Murakami H; Kumagai Y; Matsumoto K; Koukitu A

Journal of Crystal Growth, Vol.502, 7-13, 2018

DOI10.1016/j.jcrysgro.2018.08.024 Export Citation

Growth temperatures and the excess chlorine effect of N-Polar GaN growth via tri-halide vapor phase epitaxy

Takekawa N, Hayashida N, Ohzeki D, Yamaguchi A, Murakami H, Kumagai Y, Matsumoto K, Koukitu A

In this paper, we investigated the effects of the growth temperature and chlorine gas on the growth of thick GaN on an N-polar GaN substrate via tri-halide vapor phase epitaxy. The results revealed that free Cl-2 is necessary for high-speed growth. When the growth temperature increases, the crystal quality improves, and a high growth rate and high crystalline quality can be simultaneously achieved.

Keywords:Growth models;Surface structure;Mass transfer;Hydride vapor phase epitaxy;Nitrides;Semiconducting III-V materials