High quality monocrystalline indium oxide (In2O3) films have been epitaxially grown on SiO2 (0001) substrates by the metal-organic chemical vapor deposition (MOCVD) method. The influences of different growth temperatures on the structural, morphological and optoelectronic properties of the films were studied in detail. The film deposited at 650 degrees C exhibited the narrowest X-ray linewidth with an epitaxial relationship of In2O3 (1 1 1)vertical bar SiO2 (0001). The highest Hall mobility of 27.84 cm(2) V-1 s(-1) with a minimum carrier concentration of 5.03 x 10(19) cm(-3) and a minimum resistivity of 4.24 x 10(-3)Omega cm was obtained for the film prepared at 650 degrees C. The average transmittance for all the samples in the visible range exceeded 82% and the optical band gap of the films was calculated about 3.7 eV.