we have reported the synthesis, electrical resistivity rho(T), Hall coefficient (R-H ) and magnetoresistance (MR) of Bi2O2Se single crystals with layered tetragonal structure (space group I4/mmm). The lattice parameters obtained after Rietveld refinement are a = b = 3.897 angstrom, c = 12.237 a, respectively. rho(T) and R-H measured in the temperature range from 2 K to 300 K show high carrier concentration extrinsic semiconductor behavior. At higher temperatures (130-300 K), the resistivity is dominated by phonon scattering mechanism, as manifested by rho(T) proportional to T-1.5 . The magnetic field dependence of resistivity is positive in the whole temperature range. The MR at 2 K increase monotonically with magnetic field and manifest very weak saturate trend up to 9 T where it reaches its maximum value with Delta rho(xx)/rho(xx) approximate to 100%.