In this work, we have investigated the growth of highly n-doped gallium arsenide (GaAs) and gallium indium phosphide (GaInP) with tellurium (Te) by metal organic vapor phase epitaxy (MOVPE) using diisopropyl telluride (DIPTe), aiming at fabricating high performances tunnel junctions. A parametric study is performed in order to optimize the n(++) -type doping. Concentrations above 2.7 x 10(19) cm(-3) were achieved in both GaAs and GaInP layers. Using these Te-doped layers, we fabricated both n on p (n/p) and p on n (p/n) tunnel junctions. The p/n tunnel junction required additional annealing steps during growth, due to memory effect and surfactant properties of Te. We characterized GaAs/GaAs, GaAs/AlGaAs and AlGaAs/GaInP tunnel junctions with peak tunneling current densities as high as 250, 3000 and 1500 A/cm(2) respectively. These tunnel junction performances are suitable for multijunction solar cells operating under high concentration.