Here, the Ag/amorphous Bi3.15Nd0.85Ti3O12/Pt resistive switching memories were designed and prepared, and the total ionizing dose (TID) effects of Co-60 gamma-ray on the Ag/amorphous Bi3.15Nd0.85Ti3O12/Pt resistive switching memories were investigated. The results show that the resistance in low resistance state (LRS), resistance in high resistance state (HRS), and set voltage are almost immune to a TID up to 1 Mrad(Si), whereas the reset voltage and forming voltage are impacted slightly. The good radiation immunity is related to the metallic conductive filaments and the amorphous Bi3.15Nd0.85Ti3O12/Pt matrix. These results suggest that the Ag/amorphous Bi3.15Nd0.85Ti3O12/Pt devices show potential for radiation-hard electronics applications.