Valley topological materials, in which electrons possess valley pseudospin, have attracted a growing interest recently. The additional valley degree of freedom offers a great potential for its use in information encoding and processing. The valley pseudospin and valley edge transport have been investigated in photonic and phononic crystals for electromagnetic and acoustic waves, respectively. In this work, by using a micromanufacturing technology, valley topological materials are fabricated on silicon chips, which allows the observation of gyral valley states and valley edge transport for elastic waves. The edge states protected by the valley topology are robust against the bending and weak randomness of the channel between distinct valley Hall phases. At the channel intersection, a counterintuitive partition of the valley edge states manifests for elastic waves, in which the partition ratio can be freely adjusted. These results may enable the creation of on-chip high-performance microultrasonic materials and devices.