Nonpolar InN nanocrystal films were grown by RF plasma-assisted evaporation technique on bare Si and quartz substrates, simultaneously. The as-grown InN films were characterized by X-ray diffraction, scanning electron microscopy, and Raman spectroscopy. The synergistic cooperation among the evaporation temperature, chamber pressure and substrate temperature is critical for the formation of nonpolar InN films. The absence of the (0 0 2) peak in the X-ray diffraction patterns indicates that as-grown InN films grew preferentially along the nonpolar plane. In addition, the InN films grown on Si and quartz substrates exhibit different crystallinity, morphology and stress. The In-rich growth condition can be responsible for the formation of nonpolar InN films.