In this paper, dynamic numerical modelling process is demonstrated, focused on the particular polycrystalline silicon photovoltaic cell behavior, in its operational range. For nested electrical parameters, results are obtained using numerical iterative methods, stated boundary limits, simplifications and reduced forms of transcendental differential equations. Firstly, electrical parameters acquisition is executed from the particular cell, at standard test conditions. The current-voltage I-V measured points set of {V-OC, I-SC, V-out, I-out} and power-voltage P-V calculated curve including maximum power point capturing {P-MPP, V-MPP, I-MPP} are utilized. Next, electrical parameters {n, R-s, R-sh, I-s, I-ph} double-diode five-parameter modelling is applied, using differential equation reduced forms system. Thus, I-V and P-V curves are dynamically modelled for stated operational temperature and irradiation intensity conditions. Measured and modelled I-V curves of the particular cell are compared. Finally, accuracy and reliability of the proposed dynamic modelling is evaluated.