The water oxidation capability of the promising photoanode bismuth vanadate (BiVO4) is hampered by poor bulk electron transport and by high rates of charge recombination at the semiconductor/electrolyte interface. Here, we demonstrate that a dual modification of BiVO4 by: (i) annealing in a hydrogen-containing environment and (ii) coating with FeOOH overlayer substantially enhances the water oxidation ability of BiVO4 photoanodes. Hydrogen treated, FeOOH coated BiVO4 photoanodes exhibit a water oxidation photocurrent density of 2.16 mA cm(-2) at 1.23 V-RHE\, which is 5 times higher than for untreated BiVO4 films. Moreover, they showed an impressive low photocurrent onset potential of -0.11 V-RHE. A stable photocurrent was observed for 1 h of water oxidation measurement at 1.23 V-RHE under 1 Sun illumination. The enhanced photocurrent of FeOOH/H: BiVO4 photoanode is ascribed to an improved bulk charge transport, as confirmed by impedance spectroscopy measurements and Mott-Schottky analysis. The cathodic shift of the onset potential originates from a lowering of the flat band potential and from an improvement of the charge transport at the semiconductor/electrolyte interface. The dual modification strategy used here offers a simple but effective approach of improving the water oxidation performance of BiVO4.