We report laser ablation experiments on polished 4H-SiC wafers using an 193 nm ArF laser over a fluence range of mJ cm(-2) -5000 mJ cm(-2). An onset of material modification was measured at a laser fluence of 925 +/- 80 mJ cm(-2,) and a concomitant etch rate of similar to 200 pm per pulse. Laser ablation sites have been analysed using optical microscopy, scanning electron microscopy, Raman microscopy and white light interferometry. Finite element simulations using COMSOL (TM) Metaphysics, 5.3 have been used to calculate laser induced temperature rise of 4H-SiC as a function of laser fluence. The laser fluence required to reach the melting points of silicon, silicon carbide and carbon have been calculated and correspond to similar to 970, 1950, 2600 mJ cm(-2) respectively. Two different surface modifications are observed. At a laser fluence in the region of 1.0 J cm(-2) the irradiated site removed material forming a uniform crater. At a higher laser fluence, in the region of 2700 mJ cm(-2), nodule-like structures form on the base of the ablation crater. The dissociation of laser irradiated 4H-SiC is briefly discussed.