Boron-doped ZnO1-xSx, (ZnO1-xSx:B) thin films were fabricated by metalorganic chemical vapor deposition (MOCVD). We investigated the structural, optical, and electrical properties of the ZnO1-xSx:B thin films. X-ray diffraction patterns showed that, except for the ZnO:B (x = 0) and ZnS:B (x = 1) thin films, the ZnO1-xSx:B thin films exhibit amorphous characters. Optical transmittance spectra were analyzed to estimate the band gaps of the thin films with different S content. All thin films showed direct band gaps ranging from 3.34 eV (ZnO:B) to 3.49 eV (ZnS:B). The influence of sulfur content on carrier concentration, electrical resistivity, and Hall mobility of the ZnO1-xSx:B thin films were analyzed from Hall effect measurements measured at temperatures ranging from liquid nitrogen temperature to room temperature. The ZnO1-xSx:B thin films exhibited n-type electrical conductivity except for ZnS:B, which was not measurable in this study due to its high resistivity ( > 100 Omega cm).