New growth window for N-polar nitride devices is reported for plasma-assisted molecular beam epitaxy (PAMBE). Nitrogen-rich growth conditions were employed to obtain good optical quality N-polar (0 0 0 (1) over bar) InGaN/GaN heterostructures. Atomically flat interfaces were obtained for N-rich growth on (0 0 0 (1) over bar) GaN substrates with high miscut angle of 4 degrees and 7 degrees. Ga-polar samples grown at the same growth conditions were rough and exhibit no indium incorporation. Obtained results point out significantly different growth kinetics on both GaN polarities and offer efficient way for fabricating N-polar devices by PAMBE.