A patterned p-type Cu2O thin-film was fabricated using 4-mW cm(-2) ultraviolet (UV) irradiation onto a preheated precursor-film formed on a Na-free glass by spin-coating a solution containing Cu(II) complexes of propylamine and ethylenediamine, and post-annealing. After a small Na-free glass plate was placed on the spin-coated and preheated precursor-film to provide a UV-shielded area, the film was UV-irradiated for 6 h at room temperature. X-ray diffraction measurement indicated that the UV-irradiation converted the Cu(II) complexes to crystallized Cu2O. The patterned film obtained by removal of the UV-shielded portion with immersion into water was then post-annealed at 400 degrees C for 3 min in an Ar-gas flow. The Hall effect measurement of the resultant film of a 90 nm thickness showed that the electrical resistivity, carrier concentration, and hole mobility were 1.4(2) x 10(2) Omega cm, 8(3) x 10(16) cm(-3), and 0.9(3) cm(2) V-1 s(-1), respectively.