The influence of different melt streams on the distribution of phosphorus in multi-crystalline silicon ingot was studied. Phosphorus-doped multi-crystalline silicon (mc-Si) ingots were directionally solidified using travelling magnetic fields (TMF) to alter axial phosphorus profiles. Resistivity distributions in the crystallized n-type ingots were measured along the ingot length. Different Lorentz forces were applied in order to enhance melt stirring and with that to transport phosphorus more rapid towards the melt surface. A new rectangular setup was developed, which enables simultaneous directional solidification of 4 G0-sized mc-Si ingots (80 x 80 x 60mm(3)) under the influence of TMF. 900 g ingots with different initial level of phosphorus doping were grown, and dopant concentrations in ingots were related to stirring intensities. The phosphorus evaporation rate significantly affects axial dopant profile of mc-Si material, thus this approach can be used as a powerful tool to control and tailor resistivity distribution along phosphorus-doped mc-Si ingots.